Atomistic Feature of Crystal Growth
نویسندگان
چکیده
منابع مشابه
atomistic and continuum simulations on tensile property of a single crystal metal with nano-holes
in this paper, we use molecular dynamics and finite element simulations to determine the mechanical properties of single-crystal metal of silver (ag) with nano-holes. the lattice transition method from 3-dimensions into 2-dimentions in molecular dynamics simulation as well as plane stress model in finite element method, is used to lessen the simulation time consuming. elasticity module reductio...
متن کاملEFFECT OF SPIRAL DESIGN ON CRYSTAL ORIENTATION DURING SINGLE CRYSTAL GROWTH
Geometrical design of the spiral crystal selector can affect crystal orientation in the final single crystal structure. To achieve a better understanding of conditions associated with the onset of crystal orientation in a spiral crystal selector, temperature field was investigated using three-dimensional finite element method during the process. Different geometries of spiral crystal selec...
متن کاملInvestigation of Different Stages of Aluminum Fluoride Crystal Growth
Crystallization of Aluminum fluoride at atmospheric pressure has been considered. Structure, size and shape of crystals formed during the crystallization process have been investigated. By applying the direct analysis method for the existed aluminum in solution, the aluminum fluoride nucleation process has been detected as a concentration valley at the outset of crystallization process. The...
متن کاملAtomistic and multiscale analyses of brittle fracture in crystal lattices
Sulin Zhang,1,2,* Ting Zhu,3 and Ted Belytschko4 1Department of Mechanical Engineering, University of Arkansas, 204 Mechanical Building, Fayetteville, Arkansas 72701, USA 2Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA 3Woodruff School of Mechanical Engineering, Georgia Institute and Technology, Atlanta, Georgia 30332...
متن کاملAtomistic Features of the Amorphous-Crystal Interface in Silicon
We simulate the amorphous-crystal interface in silicon using a combination of interatomic potential molecular-dynamics and tight-binding conjugate-gradient relaxation. The samples we create have high quality crystalline and amorphous portions. We develop some localized measures of order to characterize the interface, including a missing neighbor vector and the bond angle deviation. We nd that t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Mineralogical Society of Japan
سال: 1970
ISSN: 1883-7018,0454-1146
DOI: 10.2465/gkk1952.10.32